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| BSV52 BSV52 C E SOT-23 Mark: B2 B NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 12 20 5.0 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max *BSV52 225 1.8 556 Units mW mW/C C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation BSV52 NPN Switching Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR)EBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IE = 100 A, IC = 0 VCB = 10 V, IE = 0 VCB = 10 V, IE = 0, TA = 125C 12 20 5.0 100 5.0 V V V nA A ON CHARACTERISTICS hFE DC Current Gain IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 10 mA, IB = 0.3 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 25 40 25 120 0.3 0.25 0.4 0.85 1.2 V V V V V VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage 0.7 SMALL SIGNAL CHARACTERISTICS fT Ccb Ceb Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance IC = 10 mA, VCE = 10 V, f = 100 MHz IE = 0, VCB = 5.0 V, f = 1.0 MHz IC = 0, VEB = 1.0 V, f = 1.0 MHz 400 4.0 4.5 MHz pF pF 3 SWITCHING CHARACTERISTICS ts ton toff Storage Time Turn-On Time Turn-Off Time IB1 = IB2 = IC = 10 mA VCC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA VCC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA, IB2 = 1.5 mA 13 12 18 ns ns ns Spice Model NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2 Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p Itf=.3 Vtf=4 Xtf=4 Rb=10) BSV52 NPN Switching Transistor (continued) Typical Characteristics 200 - DC CURRENT GAIN V CESAT - COLLE CTOR-EMITTER VOLTAGE (V) DC Current Gain vs Collector Current VC E = 1.0V 150 125 C Collector-Emitter Saturation Voltage vs Collector Current 0.5 0.4 0.3 25 C = 10 100 25 C 0.2 0.1 0 0.1 - 40 C 125 C FE 50 - 40 C h 0.01 IC 0.1 1 10 - COLLECTOR CURRENT (mA) 100 1 10 100 I C - COLLECTOR CURRENT (mA) 500 V BE(O N) - BASE-E MITTER ON VOLTAGE (V) V BESAT- BASE -EMITTER VOLTAG E (V) Base-Emitter Saturation Voltage vs Collector Current 1.4 1.2 1 0.8 0.6 0.4 0.1 IC - 40 C Base-Emitter ON Voltage vs Collector Current 1 - 40C = 10 0.8 25 C 125 C 0.6 25 C 125 C 0.4 V CE= 1.0V 1 10 100 - COLLE CTOR CURRENT ( mA) 300 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLECTOR CURRENT (nA) 600 V CB = 20V 100 10 1 25 50 75 100 125 T A - AMBIENT TE MPERATURE (C) 150 BSV52 NPN Switching Transistor (continued) Typical Characteristics (continued) Output Capacitance vs Reverse Bias Voltage 5 100 Switching Times vs Collector Current SWITCHING TIMES (ns) 50 20 ts r 10 5 2 1 2 ts f ts s VCC = 3.0 V I C = 10 I B1 = I B2 = 10 F = 1.0MHz CAPACITANCE (pF) 4 3 C obo C ibo 2 1 0 0.1 td s 5 10 20 50 100 I C - COLLECTOR CURRENT (mA) 0.5 1 5 10 REVERSE BIAS VOLTAGE (V) 50 300 I B2 - TURN OFF BASE CURRENT (mA) Switching Times vs Ambient Temperature 12 ts f S WITCHING TIMES ( ns) 10 8 6 tsd 4 2 0 25 T A Storage Time vs Turn On and Turn Off Base Currents -12 -10 -8 t s= 3.0 ns -6 -4 -2 0 4.0 ns I C = 10 mA VCC = 3.0 V ts s 3 6.0 ns tsr I C= 10 mA, I B1 = 3.0 mA, I B2 = 1.5 mA, VCC = 3.0 V 50 75 - AMBIENT TE MPERATURE (C) 100 0 2 4 6 8 I B1 - TURN ON BASE CURRENT (mA) 10 I B2 - TURN OFF BASE CURRENT (mA) -12 -10 -8 I B2 - TURN OFF BASE CURRENT (mA) Storage Time vs Turn On and Turn Off Base Currents I C = 10 mA VCC = 3.0 V Storage Time vs Turn On and Turn Off Base Currents -30 -25 -20 -15 -10 -5 0 16.0 ns I = 100 mA C VCC = 3.0 V t S= 3.0 ns 4.0 ns 8.0 ns 6.0 ns t s= 3.0 ns -6 -4 -2 0 4.0 ns 6.0 ns 0 2 4 6 8 I B1 - TURN ON BASE CURRENT (mA) 10 0 5 10 15 20 25 I B1 - TURN ON BASE CURRENT (mA) 30 BSV52 NPN Switching Transistor (continued) Typical Characteristics (continued) I B2 - TURN OFF BASE CURRENT (mA) -6 -5 -4 I B2 - TURN OFF BASE CURRENT (mA) Fall Time vs Turn On and Turn Off Base Currents I C = 10 mA VCC = 3.0 V 8.0 ns Fall Time vs Turn On and Turn Off Base Currents -12 -10 -8 -6 -4 -2 0 I C = 30 mA VCC = 3.0 V ft 3.0 ns 4.0 ns t f = 7.0 ns -3 -2 -1 0 10 ns = 2.0 ns 5.0 ns 0 2 I B1 4 6 8 - TURN ON BASE CURRENT (mA) 10 0 2 4 6 8 10 I B1 - TURN ON BASE CURRENT (mA) 12 -30 -25 -20 -15 -10 -5 0 V BE(O)- BASE-EMITTER OFF VOLTAGE (V) I B2 - TURN OFF BASE CURRENT (mA) Fall Time vs Turn On and Turn Off Base Currents I C = 100 mA VCC = 3.0 V t f = 2.0 ns 3.0 ns 4.0 ns Delay Time vs Base-Emitter OFF Voltage and Turn On Base Current -6 -5 -4 -3 -2 -1 0 3.0 ns 5.0 ns 4.0 ns I C = 10 mA V CC = 3.0 V t d = 8.0 ns 8.0 ns 12.0 ns 0 5 10 15 20 25 I B1 - TURN ON BASE CURRENT (mA) 30 1 2 5 10 20 I B1 - TURN ON BASE CURRENT (mA) 50 - TURN ON BASE CURRENT (mA) Rise Time vs. Turn On Base Current and Collector Current 50 P D - POWER DISSIPATION (mW) Power Dissipation vs Ambient Temperature 350 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( oC) 125 150 SOT-23 VCC = 3.0 V t r= 2.0 ns 5.0 ns 10 1 10 ns 20 ns B1 0 1 10 100 I C - COLLECTOR CURRENT (mA) 500 I BSV52 NPN Switching Transistor (continued) Test Circuits 'A' 0 VIN - 10 56 Pulse generator VIN Rise Time < 1 ns Source Impedance = 50 PW 300 ns Duty Cycle < 2% 0.0023 F 890 500 0.1 F +6V 1 K 0 - 4V VOUT 10% Pulse waveform at point ' A' VIN 0.1 F 500 91 10% 0.0023 F VOUT ts + 11 V 10 F 10 F + 10 V FIGURE 1: Charge Storage Time Measurement Circuit VOUT 0 VIN 10% 220 VIN 0 10% VOUT 90% t on ton VBB = - 3.0 V VIN = + 15.25 V VIN 3.3 K 50 0.0023 F 3.3 K 50 VOUT toff 90% t off VBB = 12 V VIN = - 20.9 V 0.05 F 0.05 F 0.0023 F Pulse generator VIN Rise Time < 1 ns Source Impedance = 50 PW 300 ns Duty Cycle < 2% To sampling oscilloscope input impedance = 50 Rise Time 1 ns VBB 0.1 F 0.1 F 3 VCC = 3.0 V FIGURE 2: tON, tOFF Measurement Circuit TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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